MPC7410EC datasheet(7/56 Pages) NXP

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MPC7410 RISC Microprocessor Hardware Specifications, Rev. 6.1

Freescale Semiconductor

General Parameters

The following list provides a summary of the general parameters of the MPC7410:

Technology

0.18 µm CMOS, six-layer metal

Die size

6.32 mm

× 8.26 mm (52 mm2)

Transistor count

10.5 million

Logic design

Fully static

Packages

Surface mount 360 ceramic ball grid array (CBGA)

Surface mount 360 high coefficient of thermal expansion ceramic ball grid array

(HCTE_CBGA)

Surface mount 360 high coefficient of thermal expansion ceramic ball grid array with

lead free C5 spheres (HCTE_CBGA Lead Free C5 Spheres)

Surface mount 360 high coefficient of thermal expansion ceramic land grid array

(HCTE_LGA)

Core power supply 1.8 V ± 100 mV DC (nominal; see Table 3 for recommended operating conditions)

I/O power supply

1.8 V ± 100 mV DC or

2.5 V ± 100 mV

3.3 V ± 165 mV (system bus only)

(input thresholds are configuration pin selectable)

Electrical and Thermal Characteristics

This section provides the AC and DC electrical specifications and thermal characteristics for the MPC7410.

4.1 DC Electrical Characteristics

The tables in this section describe the MPC7410 DC electrical characteristics. Table 1 provides the absolute

maximum ratings.

Table 1. Absolute Maximum Ratings 1

Characteristic

Symbol

Maximum Value

Unit

Notes

Core supply voltage

VDD

–0.3 to 2.1

PLL supply voltage

AVDD

–0.3 to 2.1

L2 DLL supply voltage

L2AVDD

–0.3 to 2.1

Processor bus supply voltage

OVDD

–0.3 to 3.6

3, 6

L2 bus supply voltage

L2OVDD

–0.3 to 2.8

Input voltage

Processor bus

Vin

–0.3 to OVDD + 0.2 V

2, 5

L2 bus

Vin

–0.3 to L2OVDD + 0.2 V

2, 5

JTAG signals

Vin

–0.3 to OVDD + 0.2 V

—

Storage temperature range

Tstg

–55 to 150

°C

—

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