RHFAHC00 datasheet(5/15 Pages) STMICROELECTRONICS

部件名	RHFAHC00

功能描述	Rad-Hard, quad high speed NAND gate

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 15 page

Table 5. AC electrical characteristics

Symbol

Parameters

Test conditions

Vcc (V)

Min.

Typ.

Max.

Unit

Cpd

Power dissipation capacitance

Cpd = Iccrms/(Vcc*F)(1)(2)

F=1 MHz, Load=10 pF

1.8

3.3

Tphl

Propagation delay mA or mB to mY

Load=10 pF to GND

1.8

1.5

5.5

2.5

1.2

3.5

3.3

Tplh

Propagation delay mA or mB to mY

1.8

1.5

5.5

2.5

1.2

3.5

3.3

Output rise time

1.8

1.9

2.5

1.4

3.3

1.3

Output fall time

1.8

1.9

2.5

1.4

3.3

1.3

1. Guaranteed by design and characterization.

2. Power dissipation capacitance (Cpd) determines both the power consumption (PD) and dynamic current consumption (IS).

Where: PD = (Cpd + CLoad) (VCC x VCC) x f + (ICC x VCC) IS = (Cpd + CLoad) VCC x f + ICC, where f is the frequency of the

input signal and CLoad is the external output load capacitance.

RHFAHC00

Electrical characteristics

DS12465 - Rev 2

page 5/15

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