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RHFAHC00 数据表(PDF) 6 Page - STMicroelectronics |
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RHFAHC00 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 15 page ![]() 4 Radiations Total dose (MIL-STD-883 TM 1019): The products guaranteed in radiation within the RHA QML-V system fully comply with the MIL-STD-883 TM 1019 specifications. The RHFAHC00 is RHA QML-V, tested and characterized in full compliance with the MIL-STD-883 specifications, between 50 and 300 rad/s only (full CMOS technology). All parameters, provided in Table 4. DC electrical characteristics and Table 5. AC electrical characteristics, apply to both pre- and post-irradiation, as follows: • All tests are performed in accordance with MIL-PRF-38535 and test method 1019 of MIL-STD-883 for total ionizing dose (TID) • The initial characterization is performed in qualification only on both biased and unbiased parts • Each wafer lot is tested at high dose rate only, in the worst bias case condition, based on the results obtained during the initial qualification Heavy-ions The behavior of the product when submitted to heavy-ions is not tested in production. Heavy-ion trials are performed on qualification lots only. Table 6. Radiation Type Characteristics Value Unit TID(1) High-dose rate (50 rad(Si)/s) and low-dose rate (0.086 rad(Si)/s) 300 krad Heavy-ions SEL(2) immune up to: (with a particle angle of 60 ° at 125 °C) and a fluence of 1e+7 cm-2) 125 MeV.cm²/mg SEL immune up to: (with a particle angle of 0 ° at 125 °C) and a fluence of 1e+7 cm-2) 62.5 SET(3) immune up to: (at 25 °C, and a fluence of 1e6 cm-2) 1. A total ionizing dose (TID) of 300 krad(Si) is equivalent to 3000 Gy(Si), (1 gray = 100 rad). 2. SEL: single event latch-up. 3. SET: single event transient RHFAHC00 Radiations DS12465 - Rev 2 page 6/15 |
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