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RHFAHC00 数据表(PDF) 6 Page - STMicroelectronics

部件名 RHFAHC00
功能描述  Rad-Hard, quad high speed NAND gate
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

RHFAHC00 数据表(HTML) 6 Page - STMicroelectronics

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4
Radiations
Total dose (MIL-STD-883 TM 1019):
The products guaranteed in radiation within the RHA QML-V system fully comply with the MIL-STD-883 TM 1019
specifications.
The RHFAHC00 is RHA QML-V, tested and characterized in full compliance with the MIL-STD-883 specifications,
between 50 and 300 rad/s only (full CMOS technology).
All parameters, provided in Table 4. DC electrical characteristics and Table 5. AC electrical characteristics, apply
to both pre- and post-irradiation, as follows:
All tests are performed in accordance with MIL-PRF-38535 and test method 1019 of MIL-STD-883 for total
ionizing dose (TID)
The initial characterization is performed in qualification only on both biased and unbiased parts
Each wafer lot is tested at high dose rate only, in the worst bias case condition, based on the results
obtained during the initial qualification
Heavy-ions
The behavior of the product when submitted to heavy-ions is not tested in production. Heavy-ion trials are
performed on qualification lots only.
Table 6. Radiation
Type
Characteristics
Value
Unit
TID(1)
High-dose rate (50 rad(Si)/s) and low-dose rate (0.086 rad(Si)/s)
300
krad
Heavy-ions
SEL(2) immune up to: (with a particle angle of 60 ° at 125 °C) and a fluence of 1e+7 cm-2)
125
MeV.cm²/mg
SEL immune up to:
(with a particle angle of 0 ° at 125 °C) and a fluence of 1e+7 cm-2)
62.5
SET(3) immune up to:
(at 25 °C, and a fluence of 1e6 cm-2)
1. A total ionizing dose (TID) of 300 krad(Si) is equivalent to 3000 Gy(Si), (1 gray = 100 rad).
2. SEL: single event latch-up.
3. SET: single event transient
RHFAHC00
Radiations
DS12465 - Rev 2
page 6/15



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