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RHFAHC00 数据表(PDF) 3 Page - STMicroelectronics

部件名 RHFAHC00
功能描述  Rad-Hard, quad high speed NAND gate
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

RHFAHC00 数据表(HTML) 3 Page - STMicroelectronics

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2
Absolute maximum ratings and operating conditions
Table 2. Absolute maximum ratings
Symbol
Parameters
Value
Units
Vcc (1)
Maximum power supply between Vcc and GND
-0.3 to 4.8
V
Tstg
Maximum temperature storage
-65 to +150
°C
Tj
Maximum junction temperature
+150
°C
Rthjc (2)
Junction-to-case thermal resistance
22
°C/W
Rthja
Junction-to-ambient thermal resistance
125
°C/W
Vi
Max. voltage on any pin
-0.3 to Vcc+0.3 (and 4.8 V max.)
V
Ii
Max. input current at any pin
±10
mA
Iout
DC output diode current
±50
mA
ESD
HBM on all pins (human body model)
4 k
V
CDM on all pins (charged device model)
1 k
V
1. All voltages refer to ground level.
2. Short-circuits can cause excessive heating. Destructive dissipation can result from short-circuits on outputs.
Note:
Absolute maximum ratings are those values beyond which damage to the device may occur. Functional
operation under these conditions is not implied.
Table 3. Operating conditions
Symbol
Parameters
Min.
Max.
Units
Vcc
Supply voltage
1.65
3.6
V
VIN
Input voltage
0
Vcc
V
Δt/Δv
Minimum input rise of fall rate
10
ns/V
Tamb
Ambient temperature range
-55
+125
°C
RHFAHC00
Absolute maximum ratings and operating conditions
DS12465 - Rev 2
page 3/15



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