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RHFAHC00 数据表(PDF) 4 Page - STMicroelectronics

部件名 RHFAHC00
功能描述  Rad-Hard, quad high speed NAND gate
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

RHFAHC00 数据表(HTML) 4 Page - STMicroelectronics

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3
Electrical characteristics
Tamb = -55 °C to +125 °C, unless otherwise specified.
Table 4. DC electrical characteristics
Symbol
Parameters
Test conditions
Vcc (V)
Min.
Typ.
Max.
Unit
VIH
High level input voltage
1.65
1
V
2.3
1.7
V
3.0
2
V
VIL
Low level input voltage
1.65
0.5
V
2.3
0.7
V
3.0
0.8
V
IIL
Input leakage current low
Vin = 0 V
1.8
-0.1
µA
2.5
-0.1
µA
3.3
-0.1
µA
IIH
Input leakage current high
Vin = Vcc-0.3 V
1.8
0.1
µA
2.5
0.1
µA
3.3
0.1
µA
ICCH
Quiescent current, output high
Vin=Vcc or GND
Iout = 0 A
3.3
50
µA
ICCL
Quiescent current, output low
Vin = Vcc or GND
Iout = 0 A
3.3
50
µA
Cin
Input capacitance(1)
f = 1 MHz, Tamb = 25 °C
2
pF
VOH
High level output voltage
IOH= -2 mA
1.65
1.2
V
2.3
1.7
V
3.0
2.4
V
IOH= -100 uA
1.65
1.45
V
2.3
2.1
V
3.0
2.8
V
VOL
Low level output voltage
IOL= +2 mA
1.65
450
mV
2.3
430
mV
3.0
400
mV
IOL= +100 uA
1.65
200
mV
2.3
200
mV
3.0
200
mV
1. Guaranteed by design and characterization.
RHFAHC00
Electrical characteristics
DS12465 - Rev 2
page 4/15



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