3

Electrical data

3.1

Absolute maximum ratings

Symbol

Parameter

Test Condition

Value

Unit

MOSFET Drain-to-Source Voltage

600

V

Drivers supply voltage

-

-0.3 to 20

V

VCCx-SENSEx VCCx to SENSEx pin voltage

-

-0.3 to 25

V

Bootstrap voltage

-

GNDx-0.3 to 600

V

BOOTx to OUTx pin voltage

-

-0.3 to 20

V

Comparator input pin voltage

-

V

Comparator open-drain output voltage

-

-0.3 to 15

V

Drain current (per MOSFET)

3.5

A

2

A

14

A

Full-bridge outputs slew rate (10% - 90%) (2)

40

V/ns

Logic inputs voltage range

-

-0.3 to 15

V

Junction temperature

-

-40 to 150

°C

Storage temperature

-

-40 to 150

°C

Total power dissipation (4)

43

W

mounted on an FR4 2s2p board as per

JESD51-5,7. See Table 4.. (5)

5

W

ESD

Human body model

-

±1500

V

Charged device model

-

±500

V

2. Characterized, not tested in production.

3. The value specified by design factor, pulse duration limited by max junction temperature and SOA.

4. Value calculated based on thermal resistance, power uniformly distributed over the four power MOSFETs, still air.

5. Actual applicative board max dissipation could be higher or lower depending on layout and cooling techniques.

3.2

Recommended operating conditions

Symbol

Pin

Parameter

Test Condition

Min.

Max.

Unit

VCC1, VCC2

VCCx -GNDx

Driver Supply voltage

-

10

20

V

BOOTx -OUTx

BOOTx to OUTx pin voltage

-

9.8

20

V

CP-x

Comparator negative input voltage

-

V

PWD5F60

Electrical data

DS12543 - Rev 1

page 5/26