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PWD5F60 数据表(PDF) 6 Page - STMicroelectronics |
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PWD5F60 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 26 page ![]() Symbol Pin Parameter Test Condition Min. Max. Unit VCP+x CP+x Comparator positive input voltage VCP- ≤ 2.5 V - VCCx (1) V TJ - Junction temperature - -40 125 °C 1. At least one of the comparator inputs must be lower than 2.5 V to guarantee proper operation. 3.3 Thermal data Table 4. Thermal data Symbol Parameter Value Unit Rth(J-CB) Thermal resistance junction to each MOSFET exposed pad, typical 2.85 °C/W Rth(J-A) Thermal resistance junction-to-ambient (1) 25 °C/W 1. The junction to ambient thermal resistance is obtained simulating the device mounted on a 2s2p (4-layer) FR4 board as per JESD51-5,7 with 4 thermal vias for each MOSFET pad. Power dissipation is uniformly distributed over the four power MOSFETs. PWD5F60 Thermal data DS12543 - Rev 1 page 6/26 |
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