VFQFPN 15 x 7 x 1 mm

Features

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Power system-in-package integrating gate drivers and high-voltage power

MOSFETs

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–

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Suitable for operating as

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full bridge

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dual independent half bridges

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UVLO protection on low-side and high-side

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3.3 V to 15 V compatible inputs with hysteresis and pull-down

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Internal bootstrap diode

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Uncommitted comparators

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Adjustable dead-time

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Bill of material reduction

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Very compact and simplified layout

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Flexible, easy and fast design

Applications

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Industrial fans and pumps

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Cooking hoods and gas heaters

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Blowers

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Industrial drives and factory automation

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Power supply units

Description

The PWD5F60 is an advanced power system-in package integrating gate drivers and

four N-channel power MOSFETs in dual half-bridge configuration.

breakdown voltage, while the embedded gate drivers high side can be easily

supplied by the integrated bootstrap diode. The high integration of the device allows

to efficiently drive loads in a tiny space.

The PWD5F60 accepts a supply voltage (VCC) extending over a wide range (10 V to

20 V) and also features UVLO protection on both the lower and upper driving

sections, preventing the power switches from operating in low efficiency or

dangerous conditions.

The input pins extended range allows easy interfacing with microcontrollers, DSP

units or Hall effect sensors.

The PWD5F60 embeds two uncommitted comparators available for protections

against overcurrent, overtemperature, etc.

The PWD5F60 operates in the industrial temperature range, -40 °C to 125 °C.

The device is available in a compact VFQFPN package.

Product status link

PWD5F60

Product summary

Marking

PWD5F60

Package

VFQFPN 15x7x1mm

Order codes

PWD5F60

Tray

PWD5F60TR

Tape and Reel

High density power driver - high voltage full bridge with integrated comparators

PWD5F60

Datasheet

DS12543 - Rev 1 - July 2018

For further information contact your local STMicroelectronics sales office.

www.st.com