PWD5F60 datasheet(9/26 Pages) STMICROELECTRONICS

部件名	PWD5F60

功能描述	High density power driver - high voltage full bridge with integrated comparators

PDF	26 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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9 / 26 page

Figure 4. Typical dead time vs. RDT resistor value

Formula for approximate RDT calculation (typ.): RDT[kΩ] = 92.2 x DT[µs] - 16.6

100

150

200

250

300

RDT (kΩ)

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.2

Power MOSFET

VCCx = 15 V; TJ = 25 °C, unless otherwise specified.

Table 6. Power MOSFET electrical characteristics

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

MOSFET on/off states

V(BR)DS Drain-source breakdown voltage

ID = 1 mA (1)

600

IDSS

Zero gate voltage drain current

VDS = 600 V

SD = SENSE = GND

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA (1)

RDS(on) Static drain-source on-resistance

ID = 1.75 A;

VGS = 10 V;

1.38

1.75

MOSFET Avalanche

IAS

Avalanche current, repetitive or not repetitive

pulse width limited by TJ max (1)

EAS

Single pulse avalanche energy

Starting TJ = 25 °C,

ID = IAS, VDD = 50 V (1)

132

Source-Drain diode

VSD

Diode forward on voltage

SD = SENSE = GND

ISD = 3.5 A;

1.6

1. Tested at the wafer level before packaging.

PWD5F60

Power MOSFET

DS12543 - Rev 1

page 9/26

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