STELPD01 datasheet(6/27 Pages) STMICROELECTRONICS

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Electrical characteristics

VIN = 5 V, VEN/Fault = 5 V, CIN = 10 µF, COUT = 10 µF, CdV/dt = floating, RLIM = 22 Ω; TJ = 25 °C; unless otherwise

specified.

Table 7. Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Under/Overvoltage protection

VCLAMP

Clamping voltage

IOUT = 10 mA

16.8

17.5

18.2

VUVLO

VIN undervoltage lockout

Turn-on, VIN rising

2.85

2.9

2.95

Hysteresis

150

Power MOSFET

TDELAY

Delay time

Enabling of chip to soft-start beginning

(10% of VOUT), No CdV/dt

165

µs

RDSon

On-resistance (1)

TJ = 25 °C, IOUT = 500 mA

mΩ

TJ = 85 °C (2)

VIN = 15 V, TJ = 25 °C, IOUT = 500 mA

VIN = 15 V, TJ = 85 °C (2)

VOFF

Off-state output voltage

VIN = 18 V, RL = infinite, EN/Fault

connected to ground

Current limit

ILIM

Overcurrent limit threshold

RLIM = 22 Ω

5.15

RLIM = 51 Ω

dV/dt circuit

dV/dt

Output voltage ramp time

From 10% to 90% of VOUT, No CdV/dt

500

µs

Blocking FET gate driver

IFET

External FET charging

current

Device on

µA

VFETmax

External FET clamp voltage

VIN = 9 V, VG-VOUT

4.6

RFETdisch

External FET discharging

current

VEN/Fault = 0 V, VG = VIN

7.5

TPLP

PLP intervention time

From EN/Fault = 0 V or VIN < VUVLO to

VG < 1 V

µs

EN/Fault

VIL

Low level input voltage

threshold

Output disabled

0.4

VI(INT)

Intermediate level input

voltage

Thermal fault, output disabled

750

825

900

VIH

High level input voltage

threshold

2.55

VI(MAX)

High state maximum voltage

VIN = 5 V

4.9

VIN = 15 V

4.95

IIL

Low level input current (sink) VEN/Fault = 0 V

-100

-140

µA

IIH

High level leakage current

for external switch

VEN/Fault = 5 V

µA

STELPD01

Electrical characteristics

DS13254 - Rev 1

page 6/27

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