LT8686S

3

Rev. 0

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ELECTRICAL CHARACTERISTICS The

l

denotes the specifications which apply over the full

operating temperature range, otherwise specifications are at TA = 25°C. VIN1 = VIN2 = 12V, VIN3 = VIN4 = 5V, fSW = 2MHz unless

otherwise specified.

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Quiescent Current, Shutdown

0.5

1.5

μA

Total Operating Input Current, Burst

VOUT1 = VBIAS = 5V, VOUT2 = 3.3V, VOUT3 = 1.8V,

VOUT4 = 1.2V, VSYNC/MODE = 0V, No Load

12

μA

Total Operating Input Current, Pulse-Skipping

VOUT1 = 5V, VOUT2 = 3.3V, VOUT3 = 1.8V, VOUT4

= 1.2V, VSYNC/MODE = Floating, No Load

1100

μA

Switching Frequency

RRT = 154k

RRT = 22.6k

RRT = 13.7k

l

l

l

0.28

1.8

2.65

0.35

2

3

0.45

2.25

3.4

MHz

MHz

MHz

SYNC Threshold Voltage

VIL

VIH

l

l

1.5

0.4

V

V

SYNC/MODE Pin Input Current

VSYNC/MODE = 6V

75

μA

Internal VCC Regulator

3.4

V

Internal VCC Undervoltage Lockout

Falling

2.3

2.4

2.5

V

BIAS Pin Threshold

4.5

V

Channels 1, 2

Minimum Input Voltage (CH1 Only)

l

2.8

3.0

V

Feedback Reference Voltage

l

0.786

0.8

0.812

V

Feedback Input Current

l

–100

0

100

nA

VFB1, VFB2 Line Regulation

VVIN1 = 3V to 42V

0.01

%/V

Peak Current Limit

3.5

4

4.5

A

Power MOSFET On-Resistance

Main Switch (Top)

Synchronous Switch (Bottom)

ISW1, ISW2 = 0.1A

ISW1, ISW2 = 0.1A

250

130

mΩ

mΩ

EN/UVLO Threshold

EN/UVLO Falling

l

0.78

0.8

0.82

V

EN/UVLO Hysteresis

100

mV

EN/UVLO Input Current

VEN/UVLO = 42V

–250

0

250

nA

EN2 Threshold

EN2 Falling

l

0.78

0.81

0.84

V

EN2 Hysteresis

50

mV

EN2 Input Current

VEN2 = 42V

–250

0

250

nA

PGOOD Upper Threshold Offset from VFB1, VFB2 VFB1, VFB2 Rising

l

4.5

7.5

10

%

PGOOD Lower Threshold Offset from VFB1, VFB2 VFB1, VFB2 Falling

l

–10

–7.5

–4.5

%

PGOOD Hysteresis

1.2

%

PGOOD Leakage

VPG1, VPG2 = 6V

–250

0

250

nA

PGOOD Pull-Down Resistance

VPG1, VPG2 = 0.1V

500

1200

Ω

TRK/SS1, TRK/SS2 Pull-Up Current

VTRK/SS1, VTRK/SS2 = 0V

2.0

μA