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ST7294 数据表(PDF) 21 Page - STMicroelectronics

部件名 ST7294
功能描述  8-BIT MCU WITH 6K ROM, EEPROM AND 16-BIT TIMER WITH INPUT CAPTURE AND DUAL OUTPUT COMPARE
PDF  69 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST7294 数据表(HTML) 21 Page - STMicroelectronics

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ST7294
4 ON-CHIP PERIPHERALS
4.1 EEPROM
4.1.1 Introduction
The ST7294 MCU includes a 256 byte EEPROM
memory for temporary data storage.
4.1.2 Functional Description
An internal charge pump avoids the need for an
external high voltage supply for the EEPROM
erasure and programming functions.
8 data registers allow simultaneous write or erase
of 1 to 8 bytes in the EEPROM array.
As shown on Figure 16, the EEPROM is organ-
ised as an array composed of 8 columns by 32
rows. Rows are selected by bits A7, A6, A5, A4,
A3, while columns are associated with the bits in
an 8-bit data register.
4.1.3 Read Operation (E2LAT=0).
The EEPROM can be read just as a normal ROM
when the E2LAT bit of the Control Register is low.
When E2LAT is low, the E2PGM and E2ERA bits
are also forced low.
4.1.4 Erase/Write Operation (E2LAT=1)
When E2LAT is set to 1, a write to an EEPROM lo-
cation latches the data in the 8-bit register corre-
sponding to the decoded column and marks the
decoded row.
As there are 8 columns in each row, up to 8 loca-
tions (having the same A7, A6, A5, A4, A3 ad-
dress bits) may be written or erased simultane-
ously.
To erase bytes: set the E2LAT and E2ERA bits,
write to the EEPROM addresses to be erased (da-
ta value is not significant), and then set the
E2PGM bit to turn the charge pump on.
To write bytes: set the E2LAT bit, write the data in
the appropriate EEPROM addresses, and then set
the E2PGM bit to turn the charge pump on.
Figure 16. EEPROM Block Diagram
HIGH VOLTAGE PUMP
ADDRESS
DECODER
LATCH
AMPLI
8 COLUMNS
VR001106
NU
NU
RESERVED
E2PGM
E2ERA
EEPROM CONTROL REGISTER
E2LAT
EEPROM
MEMORY
ARRAY



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