Figure 7. Collector current vs switching frequency

IGBT06111520M65BCCS

40

30

20

10

0

10 0

10 1

10 2

IC

(A)

f (kHz)

Rectangular current shape

(duty cycle =0.5, VCC = 400 V, RG = 12 Ω

VGE = 0/15 V, Tj = 175 °C

TC = 80 °C

TC = 100 °C

Figure 8. Forward bias safe operating area

IGBT06111520M65BFSOA

101

100

100

101

102

IC

(A)

VCE (V)

single pulse, T C = 25°C,

T J ≤ 175 °C, V GE = 15 V

tp = 1 ms

tp = 10 µs

tp = 100 µs

tp = 1 µs

Figure 9. Transfer characteristics

IGBT29101520M65FTCH

60

50

40

30

20

10

0

6

7

8

9

10

11

I C

(A)

VGE (V)

VCE = 6 V

TJ = 25 °C

TJ = 175 °C

Figure 10. Diode VF vs forward current

IGBT30101520M65FDVF

2.2

1.8

1.4

1.0

0.6

0.2

0

10

20

30

V F

(V)

I F (A)

T j = -40 °C

T j = 175 °C

T j = 25 °C

Figure 11. Normalized VGE(th) vs junction temperature

IGBT29101520M65FNVGE

1.1

1.0

0.9

0.8

0.7

-50

0

50

100

150

V GE(th)

(Norm.)

T J (°C)

VCE = VGE, IC = 500 μΑ

Figure 12. Normalized V(BR)CES vs junction temperature

IGBT29101520M65FNVBR

1.04

1.0

0.96

0.92

0.88

-50

0

50

100

150

V (BR)CES

(Norm.)

T J(°C)

I

C = 250 µA

STGP20M65DF2

Electrical characteristics (curves)

DS11374 - Rev 3

page 6/16