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STGP20M65DF2 数据表(PDF) 2 Page - STMicroelectronics |
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STGP20M65DF2 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 16 page ![]() 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 650 V IC Continuous collector current at TC = 25 °C 40 A Continuous collector current at TC = 100 °C 20 A ICP(1) Pulsed collector current 80 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 40 A Continuous forward current at TC = 100 °C 20 A IFP(1) Pulsed forward current 80 A PTOT Total dissipation at TC = 25 °C 166 W TSTG Storage temperature range -55 to 150 °C TJ Operating junction temperature range -55 to 175 °C 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.9 °C/W RthJC Thermal resistance junction-case diode 2.08 °C/W RthJA Thermal resistance junction-ambient 62.5 °C/W STGP20M65DF2 Electrical ratings DS11374 - Rev 3 page 2/16 |
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