Figure 13. Capacitance variations

IGBT29101520M65FCVR

10 3

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

C

(pF)

V CE (V)

f = 1 MHz

C ies

C oes

C res

Figure 14. Gate charge vs gate-emitter voltage

IGBT29101520M65FGCGE

16

12

8

4

0

0

10

20

30

40

50

60

70

VGE

(V)

Qg (nC)

VCC = 520 V, IC = 20 A, IG =1mA

Figure 15. Switching energy vs collector current

IGBT29101520M65FSLC

2.0

1.6

1.2

0.8

0.4

0.0

0

10

20

30

40

E

(mJ)

I C (A)

E tot

E off

E on

VCC = 400 V, RG = 12 Ω,

VGE = 15 V, TJ = 175 °C

Figure 16. Switching energy vs gate resistance

IGBT29101520M65FSLG

2.4

2.0

1.6

1.2

0.8

0.4

0

0

40

80

120

E

(mJ)

RG (Ω)

VCC = 400 V, IC = 20 A, VGE = 15 V, Tj = 175 °C

E tot

E off

E on

Figure 17. Switching energy vs temperature

IGBT29101520M65FSLT

1.0

0.8

0.6

0.4

0.2

0

0

50

100

150

E

(mJ)

T J (°C)

V CC =400 V, I C = 20 A, R g = 12 Ω, V GE = 15 V

E tot

E off

E on

Figure 18. Switching energy vs collector emitter voltage

IGBT29101520M65FSLV

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

150

250

350

450

E

(mJ)

V CE (V)

I C = 20 A, R g = 12 Ω, V GE = 15 V, T j = 175 °C

E tot

E off

E on

STGP20M65DF2

Electrical characteristics (curves)

DS11374 - Rev 3

page 7/16