Figure 19. Short-circuit time and current vs VGE

IGBT29101520M65FSCV

20

15

10

5

0

130

100

70

40

10

9

10

11

12

13

14

15

t sc

(µs)

V GE (V)

I SC

(A)

V CC ≤ 400 V

T j ≤ 150 °C

I SC

t SC

Figure 20. Switching times vs collector current

IGBT30101520M65FSTC

10 2

10 1

10 0

0

10

20

30

40

t

(ns)

IC (A)

VCC = 400 V, VGE = 15 V, RG = 12 Ω, Tj = 175°C

t f

t d(off)

t d(on)

t r

Figure 21. Switching times vs gate resistance

IGBT29101520M65FSTR

10 2

10 1

10 0

0

40

80

120

t

(ns)

RG (Ω)

VCC = 400 V, VGE = 15 V, IC = 20 A, Tj = 175 °C

t f

t r

t d(off)

t d(on)

Figure 22. Reverse recovery current vs diode current

slope

IGBT29101520M65FRRC

35

25

15

5

200

800

1400

2000

I rrm

(A)

di/dt (A/µs)

VCC = 400 V, VGE = 15 V, IF = 20 A, TJ = 175 °C

Figure 23. Reverse recovery time vs diode current slope

IGBT20101520M65FRRT

350

300

250

200

150

200

800

1400

2000

t rr

(ns)

di/dt (A/µs)

VCC = 400 V, VGE = 15 V, IF = 20 A, TJ = 175 °C

Figure 24. Reverse recovery charge vs diode current

slope

IGBT29101520M65FRRQ

2.1

2.05

2

1.95

200

800

1400

2000

Q rr

(µC)

di/dt (A/µs)

VCC = 400 V, VGE = 15 V, IF = 20 A, TJ = 175 °C

STGP20M65DF2

Electrical characteristics (curves)

DS11374 - Rev 3

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