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STP15810 数据表(PDF) 6 Page - STMicroelectronics

部件名 STP15810
功能描述  N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a TO-220 package
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP15810 数据表(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STP15810
6/13
DocID024972 Rev 4
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
Figure 4. Output characteristics
Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage
Figure 7. Static drain-source on-resistance
ID
10
1
0.1
1
VDS(V)
10
(A)
Operation
in
this
area
is
Limited
by
max
R
DS(on)
10ms
1ms
100
µs
0.1
Tj=175°C
Tc=25°C
Single pulse
100
AM18051v1
Single pulse
δ=0.5
0.05
0.02
0.01
0.1
0.2
K
10
tp(s)
-4
10
-3
10
-1
10
-5
10
-2
10
-2
10
-1
10
0
c
AM18052v1
ID
250
150
50
0
0
2
VDS(V)
4
(A)
6
350
400
5V
6V
VGS=10V
100
200
300
7V
8V
8
AM18042v1
ID
300
200
100
0
0
4
VGS(V)
8
(A)
2
6
50
150
250
VDS=4V
AM18043v1
VGS
6
4
2
0
0
40
Qg(nC)
(V)
120
8
80
10
VDD=50V
ID=110A
12
AM18044v1
RDS(on)
3.57
3.56
3.55
0
20
ID(A)
(m
Ω)
40
3.58
VGS=10V
60
80
3.59
3.60
3.61
100
3.62
AM18054v1



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