STP15810 datasheet(3/13 Pages) STMICROELECTRONICS

部件名	STP15810

功能描述	N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a TO-220 package

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

3 / 13 page

DocID024972 Rev 4

3/13

STP15810

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

100

VGS

Gate- source voltage

±20

Drain current (continuous) at TC = 25 °C

110

Drain current (continuous) at TC = 100 °C

110

IDM

(1)

Pulse width is limited by safe operating area

Drain current (pulsed) TC = 25 °C

440

PTOT

Total dissipation at TC = 25 °C

250

EAS

(2)

Starting Tj=25 °C, ID=30 A, VDD=50 V

Single pulse avalanche energy

495

Operating junction temperature

-55 to 175

°C

Tstg

Storage temperature

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.6

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

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