This is information on a product in full production.

August 2014

DocID024972 Rev 4

1/13

STP15810

N-channel 100 V, 0.0036

Ω typ., 110 A, STripFET™ F7

Power MOSFET in a TO-220 package

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• 100% avalanche tested

• Ultra low on-resistance

Applications

• Switching applications

Description

This N-channel Power MOSFETs utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

TO-220

1

2

3

TAB

Order code

VDS

RDS(on)max

ID

PTOT

STP15810

100 V

0.0042

Ω

110 A

250 W

Table 1. Device summary

Order code

Marking

Package

Packaging

STP15810

15810

TO-220

Tube

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