STP15810 datasheet(7/13 Pages) STMICROELECTRONICS

部件名	STP15810

功能描述	N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a TO-220 package

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

7 / 13 page

DocID024972 Rev 4

7/13

STP15810

Electrical characteristics

Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage vs

temperature

Figure 10. Normalized on-resistance vs

temperature

Figure 11. Normalized VDS vs temperature

Figure 12. Source-drain diode forward

characteristics

3000

2000

1000

VDS(V)

(pF)

Ciss

Coss

Crss

100

4000

6000

7000

8000

5000

AM18046v1

VGS(th)

0.7

0.6

0.5

0.4

-75

TJ(°C)

(norm)

0.8

-25

125

ID=250

µA

0.9

1.1

AM18047v1

RDS(on)

1.8

1.2

0.8

0.4

TJ(°C)

(norm)

0.6

1.4

1.6

-75

-25

125

AM18048v1

ID=55A

VDS

(norm)

0.96

0.97

0.98

0.99

1.01

1.02

1.03

ID=1mA

1.04

-75

-25

125

TJ(°C)

AM18049v1

VSD

ISD(A)

(V)

100

0.3

0.4

0.5

0.6

TJ=-55°C

TJ=175°C

TJ=25°C

0.7

0.8

0.9

AM18055v1

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