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STTH302S

April 2002 - Ed: 1A

HIGH EFFICIENCY ULTRAFAST DIODE

®

The STTH302S, which is using ST’s new 200V

planar technology, is specially suited for switching

mode base drive & transistor circuits.

The device is also intended for use as a free

wheeling diode in power supplies and other power

switching applications.

DESCRIPTION

s

Very low conduction losses

s

Negligible switching losses

s

Low forward and reverse recovery times

s

High junction temperature

FEATURES AND BENEFITS

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

200

V

Average forward current

Tl = 107°C

δ =0.5

3

A

Surge non repetitive forward current

tp = 10 ms Sinusoidal

100

A

Storage temperature range

- 65 + 175

°C

Tj

Maximum operating junction temperature

175

°C

ABSOLUTE RATINGS (limiting values)

3A

200 V

Tj (max)

175 °C

0.75 V

trr (max)

35 ns

MAIN PRODUCT CHARACTERISTICS

SMC

Symbol

Parameter

Maximum

Unit

Junction to lead

20

°C/W

THERMAL PARAMETERS