STTH302S datasheet(2/5 Pages) STMICROELECTRONICS

部件名	STTH302S

功能描述	HIGH EFFICIENCY ULTRAFAST DIODE

PDF	5 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 5 page

STTH302S

2/5

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR*

Reverse leakage

current

Tj = 25°C

VR =VRRM

µA

Tj = 125°C

VF**

Forward voltage drop

Tj = 25°C

IF = 3 A

0.95

Tj = 125°C

IF = 3 A

0.66

0.75

Pulse test: * tp = 5ms,

δ <2%

** tp = 380µs,

δ <2%

To evaluate the maximum conduction losses use the following equation :

P=0.60xIF(AV) + 0.05 IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery

time

Tj = 25°C

IF =1 A Irr = -50 A/µs

VR = 30V

tfr

Forward recovery

time

Tj = 25°C

IF =3A dIF/dt=50A/

µs

VFR =1.1xVFmax

VFP

Forward recovery

voltage

Tj = 25°C

IF =3A dIF/dt=50A/

µs

1.6

DYNAMIC ELECTRICAL CHARACTERISTICS

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