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STTH302S 数据表(PDF) 4 Page - STMicroelectronics |
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STTH302S 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 5 page ![]() STTH302S 4/5 0.0 1.0 2.0 3.0 4.0 5.0 6.0 1 10 100 1000 dI /dt(A/µs) F I F=3A V R=100V T j=125°C T j=25°C I (A) RM Fig. 7: Peak reverse recovery current versus dIF/dt (90% confidence). 0 10 20 30 40 50 60 70 80 90 100 1 10 100 1000 dI /dt(A/µs) F I F=3A V R=100V T j=125°C T j=25°C Q (nC) RR Fig. 8: Reverse recovery charges versus dIF/dt (90% confidence). 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 150 175 Tj(°C) I RM Q RR t RR I F=3A dI F/dt=200A/µs V R=100V I ; t ; Q [Tj] / I ; t ; Q [Tj = 25°C] RM RR RR RM RR RR Fig. 9: Relative variations of dynamic parameters versus junction temperature. 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 S(cm²) Rth(j-a)(°C/W) Fig. 10: Thermal resistance junction to ambient versus copper surface under each lead (epoxy FR4, e = 35µm). |
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