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STTH302S 数据表(PDF) 3 Page - STMicroelectronics |
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STTH302S 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 5 page ![]() STTH302S 3/5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 I (A) F(AV) P (W) F(AV) T δ=tp/T tp δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 Fig. 1: Average forward power dissipation versus average forward current. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 175 T (°C) amb R th(j-a)=Rth(j-l) R th(j-a)=75°C/W S=1cm² I (A) F(AV) Fig. 2: Average forward current versus ambient temperature ( δ = 0.5) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 tp(s) T δ=tp/T tp Zth(j-a)/Rth(j-a) δ = 0.5 δ = 0.2 δ = 0.1 Single pulse Fig. 3: Relative variation of thermal impedance junction ambient versus pulse duration (Printed circuit board epoxy FR4). 10 100 1 10 100 1000 V (V) R F=1MHz V osc=30mV T j=25°C C(pF) Fig. 5: Junction capacitance versus reverse voltage applied (typical values). 0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 V (V) FM T j=25°C (Maximum values) T j=125°C (Maximum values) T j=125°C (Maximum values) T j=125°C (Typical values) T j=125°C (Typical values) I (A) FM Fig. 4: Forward voltage drop versus forward current. 0 10 20 30 40 50 60 70 80 90 100 1 10 100 1000 dI /dt(A/µs) F I F=3A V R=100V T j=125°C T j=25°C t (ns) RR Fig. 6: Reverse recovery time versus dIF/dt (90% confidence). |
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