STGD4M65DF2_V01 datasheet(5/20 Pages) STMICROELECTRONICS

部件名	STGD4M65DF2

功能描述	Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

PDF	20 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

5 / 20 page

2.1

STGD4M65DF2 electrical characteristics (curves)

Figure 1. Power dissipation vs. case temperature

IGBT160320161051PDT

-50

100

150

P TOT

(W)

T C(°C)

VGE ≥15 V, T

J ≤ 175 °C

Figure 2. Collector current vs. case temperature

IGBT170320161114CCT

-50

100

150

I C

(A)

T C(°C)

VGE ≥15 V, T

J ≤ 175 °C

Figure 3. Output characteristics (TJ = 25 °C)

IGBT160320161105OC25

I C

(A)

V CE (V)

V GE = 15 V

9 V

7 V

11 V

13 V

Figure 4. Output characteristics (TJ = 175 °C)

IGBT160320161107OC175

I C

(A)

V CE (V)

V GE = 15 V

9 V

7 V

11 V

13 V

Figure 5. VCE(sat) vs. junction temperature

IGBT160320161120VCET

3.0

2.5

2.0

1.5

1.0

-50

100

150

V CE(SAT)

(V)

T J (°C)

V GE = 15 V

I C = 2 A

I C = 4 A

I C = 8 A

Figure 6. VCE(sat) vs. collector current

IGBT160320161125VCEC

3.0

2.5

2.0

1.5

1.0

0.5

V CE(SAT)

(V)

I C (A)

V GE = 15 V

T j = -40 °C

T j = 175 °C

T j = 25 °C

STGD4M65DF2

STGD4M65DF2 electrical characteristics (curves)

DS11397 - Rev 5

page 5/20

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