STGD4M65DF2_V01 datasheet(6/20 Pages) STMICROELECTRONICS

6 / 20 page

Figure 7. Collector current vs. switching frequency

IGBT160320161125CCS

10 0

10 1

10 2

(A)

f (kHz)

Rectangular current shape

(duty cycle = 0.5, VCC = 400 V,

RG = 47 Ω,VGE = 0/15 V, Tj = 175 °C

TC = 80 °C

TC = 100 °C

Figure 8. Forward bias safe operating area

IGBT160320161133FSOA

10 1

10 0

10 -1

10 0

10 1

10 2

(A)

VCE (V)

single pulse, TC = 25°C,

TJ ≤175 °C, VGE = 15 V

tp = 1 µs

tp = 10 µs

tp = 100 µs

tp = 1 ms

Figure 9. Transfer characteristics

IGBT170320161116TCH

I C

(A)

V GE (V)

V CE = 6 V

T j = 175 °C

T j = 25 °C

Figure 10. Diode VF vs. forward current

IGBT160320161134DVF

2.6

2.2

1.8

1.4

1.0

0.6

0.2

V F

(V)

I F (A)

T j = -40 °C

T j = 175 °C

T j = 25 °C

Figure 11. Normalized VGE(th) vs. junction temperature

IGBT160320161135NVGE

1.05

0.95

0.85

0.75

-50

100

150

V GE(th)

(Norm.)

T J (°C)

V CE = V GE , I C = 250 µA

Figure 12. Normalized V(BR)CES vs. junction temperature

IGBT160320161135NVBR

1.06

1.02

0.98

0.94

0.9

-50

100

150

V (BR)CES

(Norm.)

T J (°C)

I C = 250 μA

STGD4M65DF2

STGD4M65DF2 electrical characteristics (curves)

DS11397 - Rev 5

page 6/20

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