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STGD4M65DF2 数据表(PDF) 8 Page - STMicroelectronics

部件名 STGD4M65DF2
功能描述  Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT
PDF  20 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD4M65DF2 数据表(HTML) 8 Page - STMicroelectronics

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Figure 19. Short-circuit time and current vs. VGE
IGBT170320161118SCV
21
17
13
9
5
25
20
15
10
5
9
10
11
12
13
14
15
t
sc
(µs)
V GE(V)
I sc
[A]
t
SC
I
SC
VGE ≥15 V, T
J ≤ 175 °C
Figure 20. Switching times vs. collector current
IGBT160320161149STC
10 2
10 1
10 0
0
2
4
6
t
(ns)
I C (A)
V CC = 400 V, V GE = 15 V, R G = 47 Ω,
T j = 175 °C
t f
t d(off)
t d(on)
t r
Figure 21. Switching times vs. gate resistance
IGBT160320161153STR
10 2
10 1
10 0
0
100
200
300
400
t
(ns)
R G (Ω)
V CC = 400 V, V GE = 15 V, I C = 4 A,
T j = 175 °C
t d(off)
t d(on)
t r
t f
Figure 22. Reverse recovery current vs. diode current
slope
IGBT170320161121RRC
6
5
4
3
2
1
0
150
300
450
600
750
Irrm
(A)
di/dt (A/µs)
VCC = 400 V, VGE = 15 V, IF = 4 A,
Tj = 175 °C
Figure 23. Reverse recovery time vs. diode current slope
IGBT170320161122RRT
440
380
320
260
200
0
150
300
450
600
750
t rr
(ns)
di/dt (A/µs)
V CC =400 V, V GE = 15 V, I F = 4 A,
T j = 175 °C
Figure 24. Reverse recovery charge vs. diode current
slope
IGBT170320161123RRQ
370
365
360
355
350
0
150
300
450
600
750
di/dt (A/µs)
Qrr
(nC)
VCC = 400 V, VGE = 15 V, IF = 4 A,
Tj = 175 °C
STGD4M65DF2
STGD4M65DF2 electrical characteristics (curves)
DS11397 - Rev 5
page 8/20



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