STGD4M65DF2_V01 datasheet(2/20 Pages) STMICROELECTRONICS

部件名	STGD4M65DF2

功能描述	Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

PDF	20 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 20 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0 V)

650

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

ICP (1)

Pulsed collector current

VGE

Gate-emitter voltage

±20

Continuous forward current at TC = 25 °C

Continuous forward current at TC = 100 °C

IFP (1)

Pulsed forward current

PTOT

Total power dissipation at TC = 25 °C

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature range

- 55 to 175

°C

1. Pulse width limited by maximum junction temperature.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

2.2

°C/W

RthJC

Thermal resistance junction-case diode

°C/W

RthJA

Thermal resistance junction-ambient

100

°C/W

STGD4M65DF2

Electrical ratings

DS11397 - Rev 5

page 2/20

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