Data Sheet

ADRF5032

1 GHz to 60 GHz, Reflective, Silicon SPDT Switch

Rev. 0

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FEATURES

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Ultra-wideband frequency range: 1 GHz to 60 GHz

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Reflective design

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Low insertion loss

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1.3 dB typical up to 40 GHz

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1.9 dB typical up to 55 GHz

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2.0 dB typical up to 60 GHz

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High isolation

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43 dB typical up to 40 GHz

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37 dB typical up to 55 GHz

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32 dB typical up to 60 GHz

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High input linearity

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P0.1dB: 24 dBm typical

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IP3: 45 dBm typical

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High-RF power handling

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Through path: 24 dBm

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Hot switching path: 21 dBm

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CMOS/LVTTL compatible

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No low-frequency spur

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RF switching time: 15 ns

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RF settling time (50% VCTRL to 0.1 dB of RF output): 35 ns

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Dual-supply operation: ±3.3 V

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12-terminal, 2.5 mm × 2.5 mm, RoHS-compliant, LGA package

APPLICATIONS

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Industrial scanners

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Test and instrumentation

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Cellular infrastructure: 5G mmWave

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Military radios, radars, electronic counter measures (ECMs)

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Microwave radios and very small aperture terminals (VSATs)

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADRF5032 is a reflective, single-pole double-throw (SPDT)

switch manufactured using the silicon process. The ADRF5032

operates from 1 GHz to 60 GHz with insertion loss of lower than 2.0

dB and isolation of higher than 32 dB. The device has a RF input

power handling capability of 24 dBm for both through paths and 21

dBm for hot switching.

The ADRF5032 requires dual supply voltages of ±3.3 V. The device

employs CMOS and low-voltage transistor logic (LVTTL) compatible

control.

The ADRF5032 is packaged in a 12-terminal, 2.5 mm × 2.5 mm,

RoHS-compliant, land grid array (LGA). The ADRF5032 operates

from −40°C to +105°C.