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M25PE80 数据表(PDF) 60 Page - STMicroelectronics |
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M25PE80 数据表(HTML) 60 Page - STMicroelectronics |
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60 / 61 page ![]() Revision history M25PE80 60/61 30-Nov-2006 5 Important note on page 6 added. VFQFPN8 and SO8W packages updated and SO8N (MN) package added (see Section 12: Package mechanical). Figure 4: Bus master and memory devices on the SPI bus updated and explanatory paragraph added. Reset signal behavior specified in Section 6.8: Read Lock Register (RDLR), Section 6.10: Page Program (PP), Section 6.12: Page Erase (PE) and Section 6.14: Sector Erase (SE) and Section 6.15: Bulk Erase (BE). Section 8: Reset added, Table 23: Reset conditions modified and Table 24: Timings after a Reset Low pulse added. Table 3: Not for new design: TY7 process only, Software protection scheme truth table (Sectors 0 and 15) applies to T7Y process only. Software protection scheme figure removed. B3 and b2 apply to T7Y process only in Table 8: Status Register format, Table 10: Lock Registers added, Table 11 applies to T7Y process only. Table 12: Lock Register In added, Table 13 applies to T7Y process only. Protection always prevails: applies to T7Y process only. TLEAD added and VIO max changed in Table 16: Absolute maximum ratings M25PE80 products processed in T9HX process added to datasheet: –WP pin replaces TSL (T7Y technology), see Section 2.6: Write Protect (W) or Top Sector Lock (TSL) – Write Status Register (WRSR) and SubSector Erase (SSE) instructions added for T9HX process – subsector protection granularity removed in T9HX process, still exists in T7Y process – Table 5: Memory organization updated to show subsectors – Status Register BP2, BP1, BP0 bits and SRWD bit added. 15-Jan-2007 7 SPM2 description and Table 4: Protected area sizes added in Section 4.8: Protection modes. VFQFPN8 package specifications updated (see Table 25 and Figure 30). small text changes. Table 29. Document revision history Date Version Changes |
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