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M25PE80 数据表(PDF) 21 Page - STMicroelectronics

部件名 M25PE80
功能描述  8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout
PDF  61 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M25PE80 数据表(HTML) 21 Page - STMicroelectronics

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M25PE80
Instructions
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6.1
Write Enable (WREN)
The Write Enable (WREN) instruction (Figure 7) sets the Write Enable Latch (WEL) bit.
The Write Enable Latch (WEL) bit must be set prior to every Page Write (PW), Page
Program (PP), Page Erase (PE), Sector Erase (SE), Bulk Erase (BE) and Write to Lock
Register (WRLR) instructions.
The Write Enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
Table 6.
Instruction set
Instruction
Description
One-Byte Instruction
Code
Address
Bytes
Dummy
Bytes
Data
Bytes
WREN
Write Enable
0000 0110
06h
0
0
0
WRDI
Write Disable
0000 0100
04h
0
0
0
RDID
Read Identification
1001 1111
9Fh
0
0
1 to 3
RDSR
Read Status Register
0000 0101
05h
0
0
1 to
∞
WRLR
Write to Lock Register
1110 0101
E5h
3
0
1
WRSR(1)
1.
Instruction available only in the T9HX process (see Important note on page 6).
Write Status Register
0000 0001
01h
0
0
1
RDLR
Read Lock Register
1110 1000
E8h
3
0
1
READ
Read Data Bytes
0000 0011
03h
3
0
1 to
∞
FAST_READ
Read Data Bytes at
Higher Speed
0000 1011
0Bh
3
1
1 to
∞
PW
Page Write
0000 1010
0Ah
3
0
1 to 256
PP
Page Program
0000 0010
02h
3
0
1 to 256
PE
Page Erase
1101 1011
DBh
3
0
0
SSE(1)
SubSector Erase
0010 0000
20h
3
0
0
SE
Sector Erase
1101 1000
D8h
3
0
0
BE
Bulk Erase
1100 0111
C7h
0
0
0
DP
Deep Power-down
1011 1001
B9h
0
0
0
RDP
Release from Deep
Power-down
1010 1011
ABh
0
0
0



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