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STGIPL30C60 数据表(PDF) 7 Page - STMicroelectronics |
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STGIPL30C60 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 23 page ![]() DocID029059 Rev 1 7/23 STGIPL30C60 Electrical ratings 2.2 Thermal data Table 5. Total system Symbol Parameter Value Unit VISO Isolation withstand voltage applied between each pin and heatsink plate (AC voltage, t = 60 s) 2500 V Tj Power chip operating junction temperature -40 to 150 °C TC Module case operation temperature -40 to 125 °C Table 6. Thermal data Symbol Parameter Value Unit Rth(j-c) Thermal resistance junction-case single IGBT 2.2 °C/W Thermal resistance junction-case single diode 5 °C/W Figure 3. Maximum IC(RMS) current vs switching frequency(1) Figure 4. Maximum IC(RMS) current vs fsine (1) 1. Simulated curves refer to typical IGBT parameters and maximum Rthj-c. |
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