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STGIPL30C60 数据表(PDF) 8 Page - STMicroelectronics |
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STGIPL30C60 数据表(HTML) 8 Page - STMicroelectronics |
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8 / 23 page ![]() Electrical characteristics STGIPL30C60 8/23 DocID029059 Rev 1 3 Electrical characteristics Tj = 25 °C unless otherwise specified. Note: ton and toff include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of IGBT itself under the internally given gate driving condition. Table 7. Inverter part Symbol Parameter Test conditions Value Unit Min. Typ. Max. VCE(sat) Collector-emitter saturation voltage VCC = VBoot = 15 V, VIN (1) = 0 to 5 V, IC = 30 A 1. Applied among HINi LINi and GND for i = U, V, W. -1.9 V VCC = VBoot = 15 V, VIN (1) = 0 to 5 V, IC = 30 A, Tj = 125 °C -2.2 ICES Collector-cut off current (VIN (1) = 0 (logic state) VCE = 550 V VCC = Vboot = 15 V - 150 µA VF Diode forward voltage VIN (1) = 0 “logic state”, IC = 30 A -2.0 2.3 V Inductive load switching time and energy ton Turn-on time VDD = 300 V, VCC = Vboot = 15 V, VIN (1)= 0 to 5 V, IC = 30 A (see Figure 5) - 440 ns tc(on) Crossover time (on) - 190 toff Turn-off time - 780 tc(off) Crossover time (off) - 135 trr Reverse recovery time - 100 Eon Turn-on switching losses - 870 µJ Eoff Turn-off switching losses - 740 |
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