Figure 13. Capacitance variations

GADG250520200737CVR

10 4

10 3

10 2

10 1

10 -1

10 0

10 1

10 2

C

(pF)

VDS (V)

Cies

Coes

Cres

f = 1 MHz

Figure 14. Gate charge vs gate-emitter voltage

GADG250520200738QVG

18

15

12

9

6

3

0

0

100 200 300 400 500 600

VGE

(V)

Qg (nC)

IC = 200 A

VCC = 520 V,

Figure 15. Switching energy vs collector current

GADG301020200956SLC

40

30

20

10

0

0

100

200

300

400

E

(mJ)

IC (A)

Etot

Eoff

Eon

VCC = 400 V,

RG = 4.7 Ω,

VGE = -8 to 15 V,

TJ = 175 °C

Figure 16. Switching energy vs gate resistance

GADG301020201004SLG

30

25

20

15

10

5

0

0

4

8

12

16

20

E

(mJ)

RG (Ohm)

Eon

Etot

Eoff

VCC = 400 V,

IC = 200 A,

VGE = -8 to 15 V,

TJ = 175 °C

Figure 17. Switching energy vs temperature

GADG250520200743SLT

16

12

8

4

0

0

50

100

150

E

(mJ)

TJ (°C)

Etot

Eoff

Eon

VGE = -8 to 15 V

RG = 4.7 Ω,

VCC = 400 V, IC = 200 A,

Figure 18. Switching energy vs collector emitter voltage

GADG250520200743SLV

24

20

16

12

8

4

0

150

250

350

450

E

(mJ)

VCE (V)

Eon

Eoff

Etot

RG = 4.7 Ω,

IC = 200 A,

VGE = -8 to 15 V,

TJ = 175 °C

STGSB200M65DF2AG

Electrical characteristics (curves)

DS13367 - Rev 3

page 7/17