1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0 V)

650

V

IC

Continuous collector current at TC = 25 °C

216 (1)

A

Continuous collector current at TC = 100 °C

200

ICP (2)(3)

Pulsed collector current

700

A

VGE

Gate-emitter voltage

±20

V

Transient gate-emitter voltage (tp ≤ 10 μs)

±30

IF(1)

Continuous forward current at TC = 25 °C

138

A

Continuous forward current at TC = 100 °C

138

IFP(2)(3)

Pulse forward current

700

A

VISO

Isolation withstand voltage applied between each pin and heat sink plate

(AC voltage 50/60 Hz, t = 60 s)

3400

Vrms

PTOT

Total power dissipation at TC = 25 °C

714

W

Tstg

Storage temperature range

-55 to 150

°C

TJ

Operating junction temperature range

-55 to 175

°C

1. Limited by wires.

2. Specified by design, not tested in production.

3. Pulse width is limited by maximum junction temperature.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance, junction-to-case, IGBT

0.21

°C/W

Thermal resistance, junction-to-case, diode

0.36

STGSB200M65DF2AG

Electrical ratings

DS13367 - Rev 3

page 2/17