STGSB200M65DF2AG datasheet(3/17 Pages) STMICROELECTRONICS

部件名	STGSB200M65DF2AG

功能描述	Automotive-grade trench gate field-stop, 650 V, 200 A, low-loss M series IGBT in an ACEPACK SMIT package

PDF	17 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 17 page

Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 3. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 1 mA

650

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 200 A

1.2

1.65

2.05

VGE = 15 V, IC = 200 A, TJ = 125 °C

1.9

VGE = 15 V, IC = 200 A, TJ = 175 °C

2.1

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

Forward on-voltage

IF = 200 A

0.7

1.9

2.65

IF = 200 A, TJ = 125 °C

1.65

IF = 200 A, TJ = 175 °C

1.55

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

100

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

±600

Table 4. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

Coes

Output capacitance

Cres

Reverse transfer capacitance

0.3

Total gate charge

VCC = 520 V, IC = 200 A, VGE = 0 to 15 V

(see Figure 27. Gate charge test circuit)

554

Qge

Gate-emitter charge

127

Qgc

Gate-collector charge

229

STGSB200M65DF2AG

Electrical characteristics

DS13367 - Rev 3

page 3/17

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