ACEPACK SMIT

1

6

4

3

9

8

7

1

3

4

6

9

8

7

C(7,8,9)

E(1,2,3,4)

ACEPACK_SMIT_IGBT

G(6)

K(5)

Features

•

AEC-Q101 qualified

•

6 μs of minimum short-circuit withstand time

•

VCE(sat) = 1.65 V (typ.) @ IC = 200 A

•

Tight parameter distribution

•

Positive VCE(sat) temperature coefficient

•

Low thermal resistance

•

Maximum junction temperature: TJ = 175 °C

•

Dice on direct bond copper (DBC) substrate

•

Isolation rating of 3400 Vrms/min

•

UL recognition: UL 1557 file E81734

Applications

•

Traction inverter

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss

and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation. Thanks to the DBC substrate, the ACEPACK SMIT surface mounting

power package offers a low thermal resistance coupled with a electrical isolated top

side thermal pad.

Product status link

STGSB200M65DF2AG

Product summary

Order code

STGSB200M65DF2AG

Marking

GSB200M65DF2AG

Package

ACEPACK SMIT

Packing

Tape and reel

Automotive-grade trench gate field-stop, 650 V, 200 A, low-loss M series IGBT

in an ACEPACK SMIT package

STGSB200M65DF2AG

Datasheet

DS13367 - Rev 3 - November 2021

For further information contact your local STMicroelectronics sales office.

www.st.com