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VIPERGAN50TR 数据表(PDF) 4 Page - STMicroelectronics

部件名 VIPERGAN50TR
功能描述  Advanced quasi-resonant offline high voltage converter with E-mode GaN HEMT
PDF  37 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

VIPERGAN50TR 数据表(HTML) 4 Page - STMicroelectronics

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2
Electrical data
2.1
Absolute maximum ratings
Stressing the device above the rating listed in Table 2 may cause permanent damage to the device. These
are stress ratings only and operation of the device at these or any other conditions above those indicated in
the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Table 2. Absolute maximum ratings
Symbol
Pin
Parameter
Value
Unit
Min.
Max.
VDRAIN
15, 16
Drain Blocking DC voltage
650
V
Drain transient voltage (Tpulse < 1 µs)
850
5, 10
Analog Inputs & Outputs
-0.3
3.6
V
IZCD
11
Zero Current Detector current
-3
3
mA
ITB
9
TB current
-3
3
mA
VDD
12
Supply Voltage (IDD < 25 mA)
-0.3
Self-
limited
V
IDD
12
Device supply current + internal Zener capability
25
mA
VDRV
13
Driver supply maximum voltage
12
V
ViOVP
6
iOVP configuration according to Figure 28, Figure 29 or
Figure 30
10
V
iOVP externally biased
6
V
VHV
8
Start-up pin (IHV<100 uA)
-0.3
Self-
limited
TJ
Junction Temperature Range
-40
150
°C
TSTG
Storage Temperature
-55
150
°C
2.2
Thermal data
Table 3. Thermal data
Symbol
Parameter
Max. value
Unit
RTH-JEP
Thermal resistance junction to Exposed Pad (1)
1.5
°C/W
RTH-JA
Thermal resistance junction to ambient (1)
32
°C/W
1. Pdiss = 1 W – Natural Convection - Board: 11.4 mm x 7.6 mm FR4, 4 layer, 2 oz copper, 5 vias under EP JESD 51-7
VIPERGAN50
Electrical data
DS13888 - Rev 2
page 4/37



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