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ICS9P960 数据表(PDF) 3 Page - Renesas Technology Corp |
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ICS9P960 数据表(HTML) 3 Page - Renesas Technology Corp |
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3 / 13 page ![]() 9P960 DUAL CHANNEL DDRII/III ZERO DELAY BUFFER IDT® DUAL CHANNEL DDRII/III ZERO DELAY BUFFER 3 9P960 REV A 051811 Absolute Maximum Ratings Stresses above the ratings listed below can cause permanent damage to the 9P960. These ratings, which are standard values for IDT commercially rated parts, are stress ratings only. Functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods can affect product reliability. Electrical parameters are guaranteed only over the recommended operating temperature range. DDRII Specifications Recommended Operating Conditions Electrical Characteristics–Input/Supply/Common Output Parameters PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS 1.8/1.5V Core Voltage AVDD1.8 With respect to GND -0.5 2.3 V 1.8/1.5V Logic Voltage VDD1.8/1.5 With respect to GND -0.5 2.3 V Storage Temperature Ts - -65 150 °C Tambient - 0 70 °C Tcase - 95 °C Input ESD protection HBM ESD prot - 2000 V 1. Guaranteed by design and characterization, not 100% tested in production. 2. Operation under these conditions is neither implied nor guaranteed. Ambient Operating Temp TA = 0 - 70°C; Supply Voltage AVDD1.8, VDD1.8/1.5 = 1.8 V +/- 0.1V (unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS VDD1.8 /1.5 1.7 1.8 1.9 V A VDD 1.8 1.7 1.8 1.9 V Low level input voltage V IL CLK_INT, C LK_INC, FB_IN 0.35V DD V High level input voltage V IH CLK_INT, C LK_INC, FB_IN 0.65V DD V Operating free-air temperature T A 070 °C 1. Unused inputs must be held high or low to prevent them from floating. Supply Voltage Notes: TA = 0 - 70°C; Supply Voltage AVDD1.8, VDD1.8/1.5 = 1.8 V +/- 0.1V (unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input High Current IIH VI = VDD or GND 10 µA Input Low C urrent I IL V I = V DD or GND -10 µA Output Disabled Low Current I ODL OE = L, V ODL = 10 0mV 100 µA I DDA AVDD1.8 @ 400MH z 34 45 mA IDD1.8 VDD1.8/1.5 @ 400MHz 436 500 mA I DD LD C L = 0p f 500 µA Input Clamp Voltage VIK VDDQ = 1.8V Iin = -18mA -1.2 V I OH = -100 µA V DD -0.2 V IOH = -9mA 1.1 V I OL=100µ A 0.1 V I OL=9mA 0.6 V Input Capacitance CIN VI = GND or VDD 23 5pF Output Capacitance C OU T VOUT = GND or VDD 23 5pF Operating Supply Current High-level output voltage V OH Low-level output voltage VOL |
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