184430

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© NXP B.V. 2010. All rights reserved.

Product data sheet

PUBLIC

Rev. 3.0 — 18 March 2010

184430

33 of 44

NXP Semiconductors

HITAG µ

ISO 18000 transponder IC

16. Limiting values

[1]

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical

Characteristics section of this specification is not implied.

[2]

This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static

charge. Nonetheless, it is suggested that conventional precautions should be taken to avoid applying values greater than the rated

maxima

17. Characteristics

[1]

Typical ratings are not guaranteed. Values are at 25

°C

.

[2]

Measured with an HP4285A LCR meter at 125 kHz/room temperature (25

°C)

[3]

Integrated Resonance Capacitor: 210pF

±3%

[4]

Integrated Resonance Capacitor: 280pF

±5%

Table 33.

Limiting values[1][2]

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Tstg

storage temperature

−55

+125

°C

VESD

electrostatic discharge voltage

JEDEC JESD 22-A114-AB

Human Body Model

±2-

kV

Ii(max)

maximum input current

IN1-IN2

−±20

mApeak

Tj

junction temperature

−40

+85

°C

Table 34.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

foper

operating frequency

100

125

150

kHz

VIN1-IN2

input voltage

456Vpeak

II

input current

IN1-IN2

-

-

±10

mApeak

Ci

input capacitance between

IN1-IN2

VIN1-IN2 = 0.5 Vrms

[2][3]

203.7

210

216.3

pF

Ci

input capacitance between

IN1-IN2

VIN1-IN2 = 0.5 Vrms

[2][4]

266

280

294

pF