HTMS8301FUGSLASHAM datasheet(5/44 Pages) NXP

5 / 44 page

184430

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Product data sheet

PUBLIC

Rev. 3.0 — 18 March 2010

184430

5 of 44

NXP Semiconductors

HITAG µ

ISO 18000 transponder IC

7. Mechanical specification

7.1 Wafer specification

See Ref. 2 “General specification for 8” wafer on UV-tape with electronic fail die marking”.

7.1.1 Wafer

• Designation:

each wafer is scribed with batch number and

wafer number

• Diameter:

200 mm (8”)

• Thickness:

150

μm ± 15 μm

• Process:

CMOS 0.14 µm

• Batch size:

25 wafers

• PGDW:

91981

7.1.2 Wafer backside

• Material:

• Treatment:

ground and stress release

• Roughness:

Ra max. 0.5 μm, Rt max. 5 μm

7.1.3 Chip dimensions

• Die size without scribe:

550

μm x 550 μm = 302500 μm2

• Scribe line width:

X-dimension:

μm (scribe line width is measured between

nitride edges)

Y-dimension:

μm (scribe line width is measured between

nitride edges)

• Number of pads:

7.1.4 Passivation on front

• Type:

sandwich structure

• Material:

PE-Nitride (on top)

• Thickness:

1.75

μm total thickness of passivation

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