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DSPIC30F 数据表(PDF) 167 Page - Microchip Technology |
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DSPIC30F 数据表(HTML) 167 Page - Microchip Technology |
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167 / 220 page ![]() 2004 Microchip Technology Inc. Preliminary DS70116C-page 165 dsPIC30F5011/5013 23.0 ELECTRICAL CHARACTERISTICS This section provides an overview of dsPIC30F electrical characteristics. Additional information will be provided in future revisions of this document as it becomes available. For detailed information about the dsPIC30F architecture and core, refer to dsPIC30F Family Reference Manual (DS70046). Absolute maximum ratings for the dsPIC30F family are listed below. Exposure to these maximum rating conditions for extended periods may affect device reliability. Functional operation of the device at these or any other conditions above the parameters indicated in the operation listings of this specification is not implied. Absolute Maximum Ratings(†) Ambient temperature under bias............................................................................................................ .-40°C to +125°C Storage temperature .............................................................................................................................. -65°C to +150°C Voltage on any pin with respect to VSS (except VDD and MCLR) ................................................... -0.3V to (VDD + 0.3V) Voltage on VDD with respect to VSS ......................................................................................................... -0.3V to +5.5V Voltage on MCLR with respect to VSS (Note 1) ......................................................................................... 0V to +13.25V Total power dissipation (Note 2) ............................................................................................................................... 1.0W Maximum current out of VSS pin ........................................................................................................................... 300 mA Maximum current into VDD pin .............................................................................................................................. 250 mA Input clamp current, IIK (VI < 0 or VI > VDD) .......................................................................................................... ±20 mA Output clamp current, IOK (VO < 0 or VO > VDD) ................................................................................................... ±20 mA Maximum output current sunk by any I/O pin..........................................................................................................25 mA Maximum output current sourced by any I/O pin .................................................................................................... 25 mA Maximum current sunk by all ports ....................................................................................................................... 200 mA Maximum current sourced by all ports .................................................................................................................. 200 mA Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD - ∑ IOH} + ∑ {(VDD - VOH) x IOH} + ∑(VOl x IOL) 2: Voltage spikes below VSS at the MCLR/VPP pin, inducing currents greater than 80 mA, may cause latchup. Thus, a series resistor of 50-100 Ω should be used when applying a “low” level to the MCLR/VPP pin, rather than pulling this pin directly to VSS. †NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Note: All peripheral electrical characteristics are specified. For exact peripherals available on specific devices, please refer the the Family Cross Reference Table. |
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