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ADRF5054BCCZN-R7 数据表(PDF) 3 Page - Analog Devices

部件名 ADRF5054BCCZN-R7
功能描述  1 GHz to 60 GHz, Reflective, Silicon SP4T Switch
PDF  13 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADRF5054BCCZN-R7 数据表(HTML) 3 Page - Analog Devices

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Data Sheet
ADRF5054
SPECIFICATIONS
analog.com
Rev. 0 | 3 of 13
VDD = 3.3 V, VSS = −3.3 V, V1 = 0 V or VDD, V2 = 0 V or VDD, TCASE = 25°C for a 50 Ω system, unless otherwise noted. RFx refers to RF1 to
RF4, and VCTRL is voltages of the digital inputs, V1 and V2.
Table 1. Electrical Characteristics
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
FREQUENCY RANGE
f
1
60
GHz
INSERTION LOSS
Between RFC and RFx (On)
1 GHz to 18 GHz
1.7
dB
18 GHz to 40 GHz
2.2
dB
40 GHz to 55 GHz
2.8
dB
55 GHz to 60 GHz
3.2
dB
RETURN LOSS
RFC
1 GHz to 18 GHz
19
dB
18 GHz to 40 GHz
20
dB
40 GHz to 55 GHz
22
dB
55 GHz to 60 GHz
18
dB
RF1 to RF4 (On)
1 GHz to 18 GHz
23
dB
18 GHz to 40 GHz
15
dB
40 GHz to 55 GHz
22
dB
55 GHz to 60 GHz
20
dB
ISOLATION
Between RFC and RF1 (Off) or RFC and RF4 (Off)
1 GHz to 18 GHz
42
dB
18 GHz to 40 GHz
37
dB
40 GHz to 55 GHz
28
dB
55 GHz to 60 GHz
28
dB
Between RFC and RF2 (Off) or RFC and RF3 (Off)
1 GHz to 18 GHz
41
dB
18 GHz to 40 GHz
33
dB
40 GHz to 55 GHz
31
dB
55 GHz to 60 GHz
32
dB
Between RF1 and RF4 (Selected) and RF2 and RF3 (Off)
1 GHz to 18 GHz
43
dB
18 GHz to 40 GHz
36
dB
40 GHz to 55 GHz
33
dB
55 GHz to 60 GHz
36
dB
Between RF2 and RF3 (Selected) and RF1 and RF4 (Off)
1 GHz to 18 GHz
45
dB
18 GHz to 40 GHz
36
dB
40 GHz to 55 GHz
37
dB
55 GHz to 60 GHz
33
dB
SWITCHING CHARACTERISTICS
Rise Time and Fall Time
tRISE, tFALL
10% to 90% of RF output (RFOUT)
5
ns
On Time and Off Time
tON, tOFF
50% VCTRL to 90% of RFOUT
25
ns
RF Settling Time
0.1 dB
50% VCTRL to 0.1 dB of final RFOUT
35
ns
INPUT LINEARITY1
1 GHz to 60 GHz
0.1 dB Power Compression
P0.1dB
25
dBm
Third-Order Intercept
IP3
Two-tone input power = 12 dBm each
tone, Δf = 1 MHz
47
dBm
SUPPLY CURRENT
VDD and VSS pins
Positive Supply Current
IDD
145
µA
Negative Supply Current
ISS
510
µA



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