Data Sheet

ADRF5054

1 GHz to 60 GHz, Reflective, Silicon SP4T Switch

Rev. 0

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FEATURES

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Ultrawideband frequency range: 1 GHz to 60 GHz

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Low insertion loss

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2.2 dB typical up to 40 GHz

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2.8 dB typical up to 55 GHz

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3.2 dB typical up to 60 GHz

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High isolation

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33 dB typical up to 40 GHz

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28 dB typical up to 55 GHz

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28 dB typical up to 60 GHz

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High input linearity

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P0.1dB: 25 dBm typical

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IP3: 47 dBm typical

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High RF power handling

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Through path: 24 dBm

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Hot switching path: 24 dBm

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CMOS-/LVTTL-compatible

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No low frequency spur

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Fast RF switching time: 25 ns

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RF settling time (50% VCTRL to 0.1 dB of RFOUT): 35 ns

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Single-supply operation capability (VDD = 3.3 V, VSS = 0 V)

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24-terminal, 3 mm × 3 mm, RoHS-compliant, LGA package

APPLICATIONS

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Industrial scanners

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Test instrumentation

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Cellular infrastructure—mmWave 5G

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Military radios, radars, and electronic counter measures (ECMs)

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Microwave radios and very small aperture terminals (VSATs)

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADRF5054 is a reflective, SP4T switch manufactured in a

silicon process. The ADRF5054 operates from 1 GHz to 60 GHz.

The switch has a low insertion loss of 2.2 dB and 3.2 dB with

33 dB and 28 dB isolation at 40 GHz and 60 GHz, respectively.

The ADRF5054 has an RF input power handling capability of 24

dBm for the through and hot switching paths. The ADRF5054

requires dual-supply voltages of ±3.3 V. The ADRF5054 employs

complementary metal-oxide semiconductor (CMOS)- and low volt-

age transistor logic (LVTTL)-compatible control.

The ADRF5054 can also operate with a single positive supply volt-

age (VDD) applied while the negative supply voltage (VSS) is tied to

ground. In this operating condition, the small signal performance is

maintained while the switching characteristics, linearity, and power

handling performance are derated (see Table 2 for more details).

The ADRF5054 comes in a 24-terminal, 3 mm × 3 mm, RoHS

compliant, land grid array (LGA) package and can operate from

−40°C to +105°C.