BSS110 datasheet(5/9 Pages) PHILIPS

部件名	BSS110

功能描述	P-channel enhancement mode vertical D-MOS transistor

PDF	9 Pages

Scroll/Zoom	100%

制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

5 / 9 page

1995 Apr 07

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

vertical D-MOS transistor

BSS110

Fig.6

Capacitance as a function of drain source

voltage; typical values.

VGS = 0.

Tj = 25 °C.

f = 1 MHz.

handbook, halfpage

MLD191

(pF)

(V)

Crss

Coss

C iss

Fig.7 Typical output characteristics.

Tj = 25 °C.

handbook, halfpage

600

200

400

MLD197

(V)

10 V

7.5 V

6 V

5 V

4 V

3 V

2.5 V

I D

(mA)

Fig.8 Typical transfer characteristics.

VDS = −10 V.

Tj = 25 °C.

handbook, halfpage

600

200

400

MLD196

I D

(mA)

(V)

Fig.9

Drain-source on-state resistance as a

function of drain current; typical values.

Tj = 25 °C.

handbook, halfpage

MLD198

102

I (mA)

RDSon

(

Ω)

3 V

2.5 V

7.5 V

10 V

4 V

5 V

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