1995 Apr 07

2

Philips Semiconductors

Product specification

P-channel enhancement mode

vertical D-MOS transistor

BSS110

FEATURES

• Low threshold voltage

• Direct interface to C-MOS, TTL, etc.

• High speed switching

• No secondary breakdown.

APPLICATIONS

• Intended for use as a Line current interruptor in

telephone sets and for applications in relay, high speed

and line transformer drivers.

DESCRIPTION

P-channel enhancement mode vertical D-MOS transistor

in a TO-92 variant package.

PINNING - TO-92 variant

PIN

SYMBOL

DESCRIPTION

1

s

source

2

g

gate

3

d

drain

CAUTION

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

Fig.1 Simplified outline and symbol.

handbook, halfpage

s

d

g

MAM144

1

3

2

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage (DC)

−

−50

V

gate-source voltage (DC)

open drain

−

±20

V

gate-source threshold voltage

−0.8

−2

V

drain current (DC)

−

−170

mA

drain-source on-state resistance

−

10

Ω

total power dissipation

−

830

mW