BSS110 datasheet(3/9 Pages) PHILIPS

3 / 9 page

1995 Apr 07

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

vertical D-MOS transistor

BSS110

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note to the “Limiting values” and “Thermal characteristics”

1. Device mounted on a printed-circuit board, maximum lead length 4 mm.

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage (DC)

−

−50

VGSO

gate-source voltage (DC)

open drain

−

±20

drain current (DC)

−

−170

IDM

peak drain current

−

−520

Ptot

total power dissipation

up to Tamb = 25 °C; note 1

−

830

Tstg

storage temperature

−65

+150

°C

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

150

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage VGS = 0; ID = −10 µA

−50

−

VGSth

gate-source threshold voltage

VDS = VGS; ID = −1 mA

−0.8

−

−2

IDSS

drain-source leakage current

VGS = 0; VDS = −40 V

−

−100

VGS = 0; VDS = −50 V

−

−10

µA

VGS = 0; VDS = −50 V; Tj = 125 °C

−

−60

µA

IGSS

gate leakage current

VDS = 0; VGS = ±20 V

−

±10

RDSon

drain-source on-state resistance VGS = −10 V; ID = −170 mA

−

Ω

y

fs

forward transfer admittance

VDS = −25 V; ID = −170 mA

−

Ciss

input capacitance

VGS = 0; VDS = −25 V; f = 1 MHz

−

Coss

output capacitance

VGS = 0; VDS = −25 V; f = 1 MHz

−

Crss

reverse transfer capacitance

VGS = 0; VDS = −25 V; f = 1 MHz

−

3.5

Switching times (see Figs 2 and 3)

ton

turn-on time

VGS = 0 to −10 V; VDD = −40 V;

ID = −200 mA

−

toff

turn-off time

VGS = −10 to 0 V; VDD = −40 V;

ID = −200 mA

−

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