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BSS110 数据表(PDF) 4 Page - NXP Semiconductors |
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BSS110 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 9 page ![]() 1995 Apr 07 4 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 Fig.2 Switching time test circuit. handbook, halfpage MLD189 50 Ω I D 10 V 0 V = 40 V DD Fig.3 Input and output waveforms. handbook, halfpage MBB690 10 % 90 % 90 % 10 % t on t off OUTPUT INPUT Fig.4 Power derating curve. handbook, halfpage 0 200 1.0 0 0.2 0.4 0.6 0.8 MLD190 T ( C) amb o 50 100 150 Ptot (W) δ = 0.01. Tamb = 25 °C. (1) RDSon limitation. Fig.5 DC SOAR. handbook, halfpage MLD193 10 3 10 1 10 10 V DS (V) I D (mA) 2 10 2 1 t p T P t t p T δ = 1 s 100 ms DC (1) tp = 10 ms |
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