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LPC804 数据表(PDF) 52 Page - NXP Semiconductors |
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LPC804 数据表(HTML) 52 Page - NXP Semiconductors |
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52 / 89 page  LPC804 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2023. All rights reserved. Product data sheet Rev. 2.1 — 25 July 2023 52 of 87 NXP Semiconductors LPC804 32-bit Arm Cortex-M0+ microcontroller 13. Dynamic characteristics 13.1 Flash memory (EEPROM based) [1] Number of program/erase cycles. [2] Programming times are given for writing 64 bytes to the flash. Tamb <= +85 C. Flash programming with IAP calls (see LPC804 user manual). Table 15. Flash characteristics Tamb = 40 C to +105 C. Based on JEDEC NVM qualification. Symbol Parameter Conditions Min Typ Max Unit Nendu endurance [1] 200,000 500,000 - cycles tret retention time powered 10 - - years not powered 20 - - years tprog/ter programming time or erase time page or multiple consecutive pages, sector or multiple consecutive sectors [2] - 2.5 - ms |
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