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GWIXP425BCT 数据表(PDF) 81 Page - Intel Corporation

部件名 GWIXP425BCT
功能描述  Intel짰 IXP42X Product Line of Network Processors and IXC1100 Control Plane Processor
PDF  134 Pages
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制造商  INTEL [Intel Corporation]
网页  http://www.intel.com
标志 INTEL - Intel Corporation

GWIXP425BCT 数据表(HTML) 81 Page - Intel Corporation

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Intel® IXP42X Product Line of Network Processors and IXC1100 Control Plane Processor
Datasheet
March 2005
Document Number: 252479, Revision: 005
81
4.3
Package Thermal Specifications
The thermal characterization parameter “
ΨJT” is proportional to the temperature difference
between the top, center of the package and the junction temperature.
This can be a useful value for verifying device temperatures in an actual environment. By
measuring the package of the device, the junction temperature can be estimated, if the thermal
characterization parameter has been measured under similar conditions.
The use of
ΨJT should not be confused with Θjc, which is the thermal resistance from the device
junction to the external surface of the package or case nearest the die attachment — as the case is
held at a constant temperature.
The case temperature can then be monitored to make sure that the maximum junction temperature
is not violated. Examples are given in the following sections.
Note:
For more information on
ΨJT, refer to the EIA/JEDEC Standard 51-2, Section 4.
4.3.1
Commercial Temperature
“Commercial” temperature range is defined in terms of the ambient temperature range, which is
specified as 0
° C to 70° C. The maximum power (P) is 2.4 W and the maximum junction
temperature (Tj) is 115
° C.
ΨJT for commercial temperature is 0.89° C/W.
Using the preceding junction-temperature formula, the commercial temperature for a 266 MHz
device — assuming a maximum power of 2 W — would be:
4.3.2
Extended Temperature
“Extended” temperature range is defined in terms of the ambient temperature range, which is
specified as -40
° C to 85° C. The maximum power (P) is 2.4 W and the maximum junction
temperature (Tj) is 115
° C.
ΨJT for extended temperature is 0.32° C/W.
Using the preceding junction-temperature formula, the extended temperature for a 533 MHz device
— assuming a maximum power of 2.4 W — would be:
Case temperature = Junction Temperature - (
ΨJT * Power Dissipation)
TJC = TJ - (ΨJT * Power Dissipation)
TJC = 115° C - (0.89 * 2.0)
TJC = 113.22° C
TJC = 115° C - (0.32 * 2.4)
TJC = 114.23° C



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